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Characterization of the transient behavior of a MESFET

Vesna Borelli, Michel Bégin, Fadhel M. Ghannouchi

Technical Report (1994)

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Abstract

Modeling and parameter extraction -- Characterization of the MESFET -- Dc measurements -- Pulsed I-V measurements -- Pulsed RF measurements.

Uncontrolled Keywords

Arséniure de gallium; Transistors MESFET

Department: Department of Electrical Engineering
PolyPublie URL: https://publications.polymtl.ca/9572/
Report number: EPM-RT-94-05
Date Deposited: 22 Nov 2021 16:36
Last Modified: 11 Nov 2022 13:48
Cite in APA 7: Borelli, V., Bégin, M., & Ghannouchi, F. M. (1994). Characterization of the transient behavior of a MESFET (Technical Report n° EPM-RT-94-05). https://publications.polymtl.ca/9572/

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