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Stability of GaN150-based HEMT in high temperature up to 400°C

Ahmad Hassan, Mohamed Ali, Aref Trigui, Sami Hached, Yvon Savaria and Mohamad Sawan

Paper (2017)

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Department: Department of Electrical Engineering
PolyPublie URL: https://publications.polymtl.ca/38489/
Conference Title: 15th IEEE International New Circuits and Systems Conference (NEWCAS 2017)
Conference Location: Strasbourg, France
Conference Date(s): 2017-06-25 - 2017-06-28
Publisher: IEEE
DOI: 10.1109/newcas.2017.8010123
Official URL: https://doi.org/10.1109/newcas.2017.8010123
Date Deposited: 18 Apr 2023 15:04
Last Modified: 25 Sep 2024 16:22
Cite in APA 7: Hassan, A., Ali, M., Trigui, A., Hached, S., Savaria, Y., & Sawan, M. (2017, June). Stability of GaN150-based HEMT in high temperature up to 400°C [Paper]. 15th IEEE International New Circuits and Systems Conference (NEWCAS 2017), Strasbourg, France. https://doi.org/10.1109/newcas.2017.8010123

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