Ahmad Hassan, Mohamed Ali, Aref Trigui, Sami Hached, Yvon Savaria
and Mohamad Sawan
Paper (2017)
An external link is available for this itemDepartment: | Department of Electrical Engineering |
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PolyPublie URL: | https://publications.polymtl.ca/38489/ |
Conference Title: | 15th IEEE International New Circuits and Systems Conference (NEWCAS 2017) |
Conference Location: | Strasbourg, France |
Conference Date(s): | 2017-06-25 - 2017-06-28 |
Publisher: | IEEE |
DOI: | 10.1109/newcas.2017.8010123 |
Official URL: | https://doi.org/10.1109/newcas.2017.8010123 |
Date Deposited: | 18 Apr 2023 15:04 |
Last Modified: | 25 Sep 2024 16:22 |
Cite in APA 7: | Hassan, A., Ali, M., Trigui, A., Hached, S., Savaria, Y., & Sawan, M. (2017, June). Stability of GaN150-based HEMT in high temperature up to 400°C [Paper]. 15th IEEE International New Circuits and Systems Conference (NEWCAS 2017), Strasbourg, France. https://doi.org/10.1109/newcas.2017.8010123 |
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