Ghaith Bany Hamad, Otmane Aı̈t Mohamed and Yvon Savaria
Paper (2016)
An external link is available for this item| Department: | Department of Electrical Engineering |
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| Research Center: | GR2M - Microelectronics and Microsystems Research Group |
| ISBN: | 9781479953417 |
| PolyPublie URL: | https://publications.polymtl.ca/35893/ |
| Conference Title: | IEEE International Symposium on Circuits and Systems (ISCAS 2016) |
| Conference Location: | Montréal, Québec |
| Conference Date(s): | 2016-05-22 - 2016-05-25 |
| Publisher: | IEEE |
| DOI: | 10.1109/iscas.2016.7539010 |
| Official URL: | https://doi.org/10.1109/iscas.2016.7539010 |
| Date Deposited: | 18 Apr 2023 15:05 |
| Last Modified: | 08 Apr 2025 12:21 |
| Cite in APA 7: | Bany Hamad, G., Mohamed, O. A.̈., & Savaria, Y. (2016, May). Towards formal abstraction, modeling, and analysis of single event transients at RTL [Paper]. IEEE International Symposium on Circuits and Systems (ISCAS 2016), Montréal, Québec. https://doi.org/10.1109/iscas.2016.7539010 |
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