Mostafa Darvishi, Yves Audet
, Yves Blaquière, Claude Thibeault, Simon Pichette and Fatima Zahra Tazi
Article (2014)
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| Department: | Department of Electrical Engineering |
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| Research Center: | GR2M - Microelectronics and Microsystems Research Group |
| PolyPublie URL: | https://publications.polymtl.ca/12513/ |
| Journal Title: | IEEE Transactions on Nuclear Science (vol. 61, no. 6) |
| Publisher: | Institute of Electrical and Electronics Engineers |
| DOI: | 10.1109/tns.2014.2369424 |
| Official URL: | https://doi.org/10.1109/tns.2014.2369424 |
| Date Deposited: | 18 Apr 2023 15:08 |
| Last Modified: | 08 Apr 2025 01:39 |
| Cite in APA 7: | Darvishi, M., Audet, Y., Blaquière, Y., Thibeault, C., Pichette, S., & Tazi, F. Z. (2014). Circuit level modeling of extra combinational delays in SRAM-based FPGAs due to transient ionizing radiation. IEEE Transactions on Nuclear Science, 61(6), 3535-3542. https://doi.org/10.1109/tns.2014.2369424 |
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