Documents publiés en "2024"

A

Andelic, M., Pofelski, A., Bicket, I. C., Assali, S., Koelling, S., Luo, L., Moutanabbir, O., & Botton, G. A. (2024). Sn Alloying Impact on Structural and Electronic Properties of Core-Shell Ge-GeSn Nanowires: A TEM Study. BIO Web of Conferences, 129, 24010-24010. Lien externe

Atalla, M. R. M., Assali, S., Daligou, G. T. E. G., Attiaoui, A., Koelling, S., Daoust, P., & Moutanabbir, O. (2024). Continuous-Wave GeSn Light-Emitting Diodes on Silicon with 2.5 μm Room-Temperature Emission. ACS Photonics, 4c00033 (7 pages). Lien externe

Atalla, M. R. M., Lemieux-Leduc, C., Assali, S., Koelling, S., Daoust, P., & Moutanabbir, O. (2024). Extended short-wave infrared high-speed all-GeSn PIN photodetectors on silicon. APL Photonics, 9(5), 056103 (8 pages). Disponible

B

Bellemare, C., Atalla, M. R. M., Daoust, P., Koelling, S., Assali, S., & Moutanabbir, O. (janvier 2024). Silicon-integrated SWIR and MWIR GeSn photoconductive devices [Présentation]. Dans SPIE OPTO, 2024, San Francisco, California, United States. Lien externe

C

Cardoux, C., Casiez, L., Chrétien, J., Goulain, P., Frauenrath, M., Pauc, N., Calvo, V., Coudurier, N., Rodriguez, P., Koelling, S., Moutanabbir, O., Gravrand, O., Hartmann, J.-M., Tchelnokov, A., & Reboud, V. (2024). In-Situ n-Type Doped Carrier-Injection Layers in GeSn Direct Bandgap LEDs for Methane Sensing. Meeting abstracts (Electrochemical Society. CD-ROM), MA2024-02(32), 2327-2327. Lien externe

K

Koelling, S., Assali, S., Nadal, G., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2024). Tracking of atomic planes in atom probe tomography. Journal of Applied Physics, 136(24), 1-11. Disponible

L

Lemieux-Leduc, C., Atalla, M. R. M., Assali, S., Koelling, S., Daoust, P., Luo, L., Daligou, G. T. E. G., Brodeur, J., Kéna-Cohen, S., Peter, Y.-A., & Moutanabbir, O. (2024). Transfer-printed Multiple GeSn Membrane Mid-infrared Photodetectors. IEEE Journal of Selected Topics in Quantum Electronics, 3450302 (12 pages). Lien externe

Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., & Moutanabbir, O. (2024). Mid-Infrared Top-Gated Ge<inf>0.82</inf>Sn<inf>0.18</inf> Nanowire Phototransistors. Advanced Optical Materials, 2400096 (7 pages). Lien externe

Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., Daligou, G. T. E. G., & Moutanabbir, O. (2024). Mid-infrared Imaging Using Strain-Relaxed Ge1–xSnx Alloys Grown on 20 nm Ge Nanowires. Nano Letters, 24(16), 4979-4986. Lien externe

M

Moutanabbir, O., Luo, L., Kim, Y., Assali, S., Atalla, M. R. M., Joo, H.-J., Koelling, S., Chen, M., Shi, X., Burt, D., & Nam, D. (2024). Group IV Mid-Infrared Optoelectronics Leveraging Nanoscale Growth Substrates. Meeting abstracts (Electrochemical Society. CD-ROM), MA2024-02(32), 2328-2328. Lien externe

N

Nadal, G., Moutanabbir, O., Koelling, S., Rahier, E., Montpetit, L., & Singh, S. (octobre 2024). Atomic-level Mapping of Cd0.9Zn0.1Te Crystals [Communication écrite]. IEEE Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector Conference (RTSD), Tampa, FL, USA. Lien externe

R

Rossi, M., van Schijndel, T. A. J., Lueb, P., Badawy, G., Jung, J., Peeters, W. H. J., Koelling, S., Moutanabbir, O., Verheijen, M. A., & Bakkers, E. P. A. M. (2024). Stemless InSb nanowire networks and nanoflakes grown on InP. Nanotechnology, 35(41), 415602 (11 pages). Disponible

S

Singh, S., Montpetit, L., Nadal, G., Atalla, M., Rahier, E., Koelling, S., & Moutanabbir, O. (octobre 2024). Impact of Br-etching on surface and current-voltage characteristics of CZT detector [Résumé]. IEEE Nuclear Science Symposium (NSS 2024), Medical Imaging Conference (MIC 2024) and Room Temperature Semiconductor Detector Conference (RTSD 2024), Tampa, FL, USA. Lien externe