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Documents publiés en "2020"

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Nombre de documents: 8

Article de revue

Abdi, S., Atalla, M., Assali, S., Kumar, A., Groell, L., Koelling, S., & Moutanabbir, O. (2020). Towards Ultra-Low Specific Contact Resistance on P-Type and N-Type Narrow Bandgap GeSn Semiconductors. ECS Meeting Abstracts, MA2020-01(22), 1322-1322. Lien externe

Assali, S., Bergamaschini, R., Scalise, E., Verheijen, M. A., Albani, M., Dijkstra, A., Li, A., Koelling, S., Bakkers, E. P. A. M., Montalenti, F., & Miglio, L. (2020). Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires. ACS Nano, 14(2), 2445-2455. Lien externe

Fadaly, E. M. T., Dijkstra, A., Suckert, J. R., Ziss, D., van Tilburg, M. A. J., Mao, C., Ren, Y., van Lange, V. T., Korzun, K., Koelling, S., Verheijen, M. A., Busse, D., Rödl, C., Furthmüller, J., Bechstedt, F., Stangl, J., Finley, J. J., Botti, S., Haverkort, J. E. M., & Bakkers, E. P. A. M. (2020). Direct-bandgap emission from hexagonal Ge and SiGe alloys. Nature, 580(7802), 205-209. Lien externe

Ioannidou, C., Navarro-López, A., Rijkenberg, A., Dalgliesh, R. M., Koelling, S., Pappas, C., Sietsma, J., van Well, A. A., & Offerman, S. E. (2020). Evolution of the precipitate composition during annealing of vanadium micro-alloyed steels by in-situ SANS. ACTA Materialia, 201, 217-230. Lien externe

Luo, L., Assali, S., Atalla, M. R. M., Koelling, S., & Moutanabbir, O. (2020). Tunable Shortwave Infrared and Midwave Infrared Optoelectronics in Germanium/Germanium Tin Core/Shell Nanowires. Meeting abstracts, MA2020-01(22), 1321-1321. Lien externe

Communication écrite

Assali, S., Attiaoui, A., Atalla, M., Alain, D., Kumar, A., Mukherjee, S., Nicolas, J., Koelling, S., & Moutanabbir, O. (octobre 2020). Engineering SiGeSn Semiconductors for MIR and THz Opto-electronic Devices [Communication écrite]. ECS Meeting Abstracts. Publié dans ECS Meeting Abstracts, MA2020-02(24). Lien externe

Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. (octobre 2020). (Invited) Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Communication écrite]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9, Honolulu, Hawaii, USA. Publié dans ECS Meeting Abstracts, MA2020-02(24). Lien externe

Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Communication écrite]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices (PRiME 2020). Publié dans ECS Transactions, 98(5). Lien externe

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