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Gujrathi, S. C., Roorda, S., D'Arcy, J. G., Pflueger, R. L., Desjardins, P., Petrov, I., & Greene, J. E. (1998). Quantitative compositional depth profiling of Si₁₋ₓ₋yGeₓCy thin films by simultaneous elastic recoil detection and Rutherford backscattering spectrometry. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 136-138, 654-660. Lien externe
Gurdal, O., Desjardins, P., Carlsson, J. R. A., Taylor, N., Radamson, H. H., Sundgren, J.-E., & Greene, J. E. (1998). Low-temperature growth and critical epitaxial thickness of fully-strained metastable Ge₁₋ₓSnₓ (x <0.26) alloys on Ge(001)2x1. Journal of Applied Physics, 83(1), 162-170. Lien externe
Kim, H., Desjardins, P., Abelson, J. R., & Greene, J. E. (1998). Pathways for hydrogen desorption from Si₁₋ₓGeₓ(001) during gas-source molecular-beam epitaxy and ultrahigh-vacuum chemical vapor deposition. Physical review. B, Condensed matter, 58(8), 4803-4808. Lien externe
Rojas-López, M., Navarro-Contreras, H., Desjardins, P., Gurdal, O., Taylor, N., Carlsson, J. R. A., & Greene, J. E. (1998). Raman scattering from fully strained Ge1-xSnx (x<=0.22) alloys grown on Ge(001)2x1 by low-temperature molecular beam epitaxy. Journal of Applied Physics, 84(4), 2219-2223. Lien externe
