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Beïque, G., Caron, M., Currie, J. F., & Meunier, M. (1995). Caractérisation structurale de couches minces de silicium polycristallin fabriquées par dépôt chimique en phase vapeur sous basse pression du SiH₄ et dopées en phosphore in situ. [Structural characterization of polysilicon thin-films fabricated by low-pressure chemical-deposition of silane and doped in-situ with phosphorus]. Canadian Journal of Physics, 73(7-8), 526-529. Lien externe
Bensaada, A., Suys, M., Beaudoin, M., Desjardins, P., Isnard, L., Masut, R. A., Cochrane, R. W., Currie, J. F., & L'Espérance, G. (juin 1995). LP-MOVPE growth and characterization of InₓGa₁₋ₓAs/InP epilayers and multiple quantum wells using tertiarybutylarsine [Communication écrite]. 6th European Workshop on Metal-Organic Vapour Phase Epitaxy and related growth techniques, Gent, Belgium. Non disponible
Diawara, Y., Currie, J. F., Yelon, A., Petrova-Koch, V., & Nikolov, A. (novembre 1994). Temperature dependence of stresses and H desorption in porous silicon [Communication écrite]. 1994 Fall Meeting, Boston, MA, USA. Lien externe
Ivanov, D., Caron, M., Ouellet, I., Blain, A. S., Hendricks, A. N., & Currie, J. F. (1995). Structural and dielectric properties of spin-on barium-strontium titanate thin films. Journal of Applied Physics, 77(6), 2666-26671. Lien externe
Shi, M. K., Legros, A., Mouton, A., Selmani, A., & Currie, J. F. (1995). Crystallization of vacuum-evaporated Se studied by near infrared microscope. Journal of Materials Science Letters, 14(18), 1278-1280. Lien externe
Sundararaman, C. S., & Currie, J. F. (1995). Characteristics of sinx/inp/in0.53ga0.47as/Inp heterostructure insulated gate (hig)fets with an in2s3 interface control layer. IEEE Transactions on Electron Devices, 42(6), 1197-1199. Lien externe
Sundararaman, C. S., & Currie, J. F. (1995). Performance of interface engineered SiNₓ/ICL/InP/In₀.₅₃Ga₀.₄₇As/InP doped channel HIGFET's. IEEE Electron Device Letters, 16(12), 554-556. Lien externe
