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Arsenault, C. J., & Meunier, M. (1989). Proposed new resonant tunneling structures with impurity planes of deep levels in barriers. Journal of Applied Physics, 66(9), 4305-4311. Lien externe
Arsenault, C. J., & Meunier, M. (1989). Resonant-tunneling lifetime comparison between double-barrier and δ-doped barrier structures. Physical Review B, 39(12), 8739-8742. Lien externe
Beaudoin, M., Arsenault, C. J., Izquierdo, R., & Meunier, M. (1989). Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by X-ray photoelectron spectroscopy. Applied Physics Letters, 55(25), 2640-2640. Lien externe
Bisson, M., Kemp, M., & Meunier, M. (1989). Fabrication and characterization of the amorphous-silicon static induction transistor. IEEE Transactions on Electron Devices, 36(12), 2844-2847. Lien externe
Izquierdo, R., Lavoie, C., & Meunier, M. (novembre 1989). KRF excimer laser deposition of titanium from TiCl₄ [Communication écrite]. 1989 MRS Fall Meeting, Boston, Mass.. Publié dans MRS Proceedings, 158. Lien externe
Kemp, M., Meunier, M., & Tannous, C. G. (1989). Simulation of the amorphous silicon static induction transistor. Solid-State Electronics, 32(2), 149-157. Lien externe
Lussier, P., Bélanger, M., Meunier, M., & Currie, J. F. (1989). CF₄-Ar reactive ion etching of gallium arsenide. Canadian Journal of Physics, 67(4), 259-261. Lien externe
Meunier, M., Bisson, M., & Kemp, M. (1989). Amorphous silicon static induction transistor. Journal of Non-Crystalline Solids, 115(1-3), 108-110. Lien externe
