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Ababou, Y., Masut, R. A., Yelon, A., & Poulin, S. (1995). Low temperature heteroepitaxy of InP on Si(111) substrates treated with buffered HF solution. Applied Physics Letters, 66(24), 3352-3354. Lien externe
Beaudoin, M., Masut, R. A., Isnard, L., Desjardins, P., Bensaada, A., L'Espérance, G., & Leonelli, R. (novembre 1994). Band offsets of InAsxP₁₋x/InP strained layer quantum wells grown by LP-MOVPE using TBAs [Communication écrite]. Microcrystalline and nanocrystalline semiconductors : Symposium F of the 1994 Fall Meeting of the Materials Research Society, Boston, USA. Lien externe
Boisvert, G., Lewis, L. J., & Yelon, A. (1995). Many-body nature of the Meyer-Neldel compensation law for diffusion. Physical Review Letters, 75(3), 469-472. Lien externe
Cliche, L., Roorda, S., & Masut, R. A. (juin 1994). Viscosity of amorphous inp during room-temperature structural relaxation [Communication écrite]. 10th International Conference on Ion Implantation Technology (IIT 1994), Catania, Italy. Publié dans Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 96(1-2). Lien externe
Masson, D. P., Ouhlal, A., & Yelon, A. (1995). Long-range structural relaxation in the Staebler-Wronski effect. Journal of Non-Crystalline Solids, 190(1-2), 151-156. Lien externe
Sundararaman, C. S., & Currie, J. F. (1995). Performance of interface engineered SiNₓ/ICL/InP/In₀.₅₃Ga₀.₄₇As/InP doped channel HIGFET's. IEEE Electron Device Letters, 16(12), 554-556. Lien externe
