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Documents dont l'auteur est "Tremblay, Yves"

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Aller à : 1999 | 1998 | 1996
Nombre de documents: 4

1999

Fortin, V., Gujrathi, S. C., Gagnon, G., Gauvin, R., Currie, J. F., Ouellet, L., & Tremblay, Y. (1999). Effect of in Situ Plasma Oxidation of Tin Diffusion Barrier for Alsicu/Tin/Ti Metallization Structure of Integrated Circuits. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 17(2), 423-431. Lien externe

1998

Fortin, V., Gagnon, G., Caron, M., Gujrathi, S. C., Currie, J. F., Ouellet, L., Tremblay, Y., & Biberger, M. (1998). The determination of phases formed in AlSiCu/TiN/Ti contact metallization structure of integrated circuits by x-ray diffraction. Journal of Applied Physics, 83(1), 132-138. Lien externe

1996

Caron, M., Gagnon, G., Fortin, V., Currie, J. F., Ouellet, L., Tremblay, Y., Biberger, M., & Reynolds, R. (1996). Calculation of a Al-Ti-O-N quaternary isotherm diagram for the prediction of stable phases in TiN/Al alloy contact metallization. Journal of Applied Physics, 79(8), 4468-4470. Lien externe

Ouellet, O. L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Biberger, M., & Reynolds, R. (1996). The effect of an oxygen plasma exposure on the reliability of a ti/tin contact metallization. Journal of Applied Physics, 79(8, pt. 1), 4438-4443. Lien externe

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