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Nourivand, A., Al-Khalili, A. J., & Savaria, Y. (2012). Postsilicon Tuning of Standby Supply Voltage in Srams to Reduce Yield Losses Due to Parametric Data-Retention Failures. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 20(1), 29-41. External link
Nourivand, A., Al-Khalili, A. J., & Savaria, Y. (2011). Analysis of resistive open defects in drowsy SRAM cells. Journal of Electronic Testing: Theory and Applications, 27(2), 203-213. External link
Nourivand, A., Al-Khalili, A. J., & Savaria, Y. (2008, August). Aggressive leakage reduction of SRAMs using error checking and correcting (ECC) techniques [Paper]. 51st IEEE International Midwest Symposium on Circuits and Systems (MWSCAS 2008), Knoxville, TN, United states. External link
