Afshin Nourivand, Asim J. Al-Khalili and Yvon Savaria
Article (2011)
An external link is available for this item
| Department: | Department of Electrical Engineering |
|---|---|
| Research Center: | GR2M - Microelectronics and Microsystems Research Group |
| PolyPublie URL: | https://publications.polymtl.ca/16369/ |
| Journal Title: | Journal of Electronic Testing: Theory and Applications (vol. 27, no. 2) |
| Publisher: | Springer |
| DOI: | 10.1007/s10836-011-5206-y |
| Official URL: | https://doi.org/10.1007/s10836-011-5206-y |
| Date Deposited: | 18 Apr 2023 15:12 |
| Last Modified: | 25 Sep 2024 15:53 |
| Cite in APA 7: | Nourivand, A., Al-Khalili, A. J., & Savaria, Y. (2011). Analysis of resistive open defects in drowsy SRAM cells. Journal of Electronic Testing: Theory and Applications, 27(2), 203-213. https://doi.org/10.1007/s10836-011-5206-y |
|---|---|
Statistics
Dimensions
Repository Staff Only
|
View Item |
