Postsilicon Tuning of Standby Supply Voltage in Srams to Reduce Yield Losses Due to Parametric Data-Retention Failures

Afshin Nourivand, Asim J. Al-Khalili and Yvon Savaria

Article (2012)

An external link is available for this item

Department:	Department of Electrical Engineering
Research Center:	GR2M - Microelectronics and Microsystems Research Group
PolyPublie URL:	https://publications.polymtl.ca/14883/
Journal Title:	IEEE Transactions on Very Large Scale Integration (VLSI) Systems (vol. 20, no. 1)
Publisher:	IEEE
DOI:	10.1109/tvlsi.2010.2093938
Official URL:	https://doi.org/10.1109/tvlsi.2010.2093938
Date Deposited:	18 Apr 2023 15:11
Last Modified:	05 Apr 2024 10:55

Cite in APA 7:	Nourivand, A., Al-Khalili, A. J., & Savaria, Y. (2012). Postsilicon Tuning of Standby Supply Voltage in Srams to Reduce Yield Losses Due to Parametric Data-Retention Failures. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 20(1), 29-41. https://doi.org/10.1109/tvlsi.2010.2093938
APA 7 (HTML)ASCII CitationAtomBibTeXDOIsDublin CoreEndNote (.ENW)MARC (ISO 2709/UTF-8) (.MRC)MARC (UTF-8) (.MRK8)MARC XMLMPEG-21 DIDLMultiline CSVOAI-ORE Resource Map (Atom Format)OPENAIREOpenURL ContextObjectOpenURL ContextObject in SpanRDF+N-TriplesRDF+N3RDF+XMLReferReference Manager (.RIS)Répertoire des publications (EndNote)Simple Metadata

Statistics

Repository Staff Only