Postsilicon Tuning of Standby Supply Voltage in Srams to Reduce Yield Losses Due to Parametric Data-Retention Failures

Afshin Nourivand, Asim J. Al-Khalili and Yvon Savaria

Article (2012)

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Department:	Department of Electrical Engineering
Research Center:	GR2M - Microelectronics and Microsystems Research Group
PolyPublie URL:	https://publications.polymtl.ca/14883/
Journal Title:	IEEE Transactions on Very Large Scale Integration (VLSI) Systems (vol. 20, no. 1)
Publisher:	IEEE
DOI:	10.1109/tvlsi.2010.2093938
Official URL:	https://doi.org/10.1109/tvlsi.2010.2093938
Date Deposited:	18 Apr 2023 15:11
Last Modified:	08 Apr 2025 01:42

Cite in APA 7:	Nourivand, A., Al-Khalili, A. J., & Savaria, Y. (2012). Postsilicon Tuning of Standby Supply Voltage in Srams to Reduce Yield Losses Due to Parametric Data-Retention Failures. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 20(1), 29-41. https://doi.org/10.1109/tvlsi.2010.2093938
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