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Nakhmanson, S. M., Drabold, D. A., & Mousseau, N. (2002). Comment on "Boson peak in amorphous silicon: A numerical study" [Discussion or Letter]. Physical Review B, 66(8), 087201 (2 pages). External link
Nakhmanson, S. M., & Mousseau, N. (2002). Crystallization study of model tetrahedral semiconductors. Journal of Physics: Condensed Matter, 14(26), 6627-6638. External link
Mousseau, N., Barkema, G. T., & Nakhmanson, S. M. (2002). Recent developments in the study of continuous random networks. Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties, 82(2), 171-183. External link
Nakhmanson, S. M., Mousseau, N., Barkema, G. T., Voyles, P. M., & Drabold, D. A. (2001). Models of paracrystalline silicon with a defect-free bandgap. International Journal of Modern Physics B, 15(24-25), 3253-3257. External link
Nakhmanson, S. M., Voyles, P. M., Mousseau, N., Barkema, G. T., & Drabold, D. A. (2001). Realistic models of paracrystalline silicon. Physical Review B, 63(23), 235207 (6 pages). External link
