S. M. Nakhmanson, Normand Mousseau, G. T. Barkema, P. M. Voyles and D. A. Drabold
Article (2001)
Document published while its authors were not affiliated with Polytechnique Montréal
An external link is available for this itemPolyPublie URL: | https://publications.polymtl.ca/41496/ |
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Journal Title: | International Journal of Modern Physics B (vol. 15, no. 24-25) |
Publisher: | World Scientific |
DOI: | 10.1142/s0217979201007580 |
Official URL: | https://doi.org/10.1142/s0217979201007580 |
Date Deposited: | 18 Apr 2023 15:21 |
Last Modified: | 08 Apr 2025 07:05 |
Cite in APA 7: | Nakhmanson, S. M., Mousseau, N., Barkema, G. T., Voyles, P. M., & Drabold, D. A. (2001). Models of paracrystalline silicon with a defect-free bandgap. International Journal of Modern Physics B, 15(24-25), 3253-3257. https://doi.org/10.1142/s0217979201007580 |
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