Models of paracrystalline silicon with a defect-free bandgap

S. M. Nakhmanson, Normand Mousseau, G. T. Barkema, P. M. Voyles and D. A. Drabold

Article (2001)

Document published while its authors were not affiliated with Polytechnique Montréal

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PolyPublie URL:	https://publications.polymtl.ca/41496/
Journal Title:	International Journal of Modern Physics B (vol. 15, no. 24-25)
Publisher:	World Scientific
DOI:	10.1142/s0217979201007580
Official URL:	https://doi.org/10.1142/s0217979201007580
Date Deposited:	18 Apr 2023 15:21
Last Modified:	18 Apr 2023 15:21

Cite in APA 7:	Nakhmanson, S. M., Mousseau, N., Barkema, G. T., Voyles, P. M., & Drabold, D. A. (2001). Models of paracrystalline silicon with a defect-free bandgap. International Journal of Modern Physics B, 15(24-25), 3253-3257. https://doi.org/10.1142/s0217979201007580
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