S. M. Nakhmanson, Normand Mousseau
, G. T. Barkema, P. M. Voyles and D. A. Drabold
Article (2001)
Document published while its authors were not affiliated with Polytechnique Montréal
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| PolyPublie URL: | https://publications.polymtl.ca/41496/ |
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| Journal Title: | International Journal of Modern Physics B (vol. 15, no. 24-25) |
| Publisher: | World Scientific |
| DOI: | 10.1142/s0217979201007580 |
| Official URL: | https://doi.org/10.1142/s0217979201007580 |
| Date Deposited: | 18 Apr 2023 15:21 |
| Last Modified: | 08 Apr 2025 07:05 |
| Cite in APA 7: | Nakhmanson, S. M., Mousseau, N., Barkema, G. T., Voyles, P. M., & Drabold, D. A. (2001). Models of paracrystalline silicon with a defect-free bandgap. International Journal of Modern Physics B, 15(24-25), 3253-3257. https://doi.org/10.1142/s0217979201007580 |
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