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Barkema, G. T., & Mousseau, N. (septembre 1999). The activation-relaxation technique: an efficient algorithm for sampling energy landscapes [Communication écrite]. 9th International Workshop on Computational Materials Science, Villasimius, Italy. Publié dans Computational Materials Science, 20(3-4). Lien externe
Biswas, P., Barkema, G. T., Mousseau, N., & van der Weg, W. F. (2001). Efficient tight-binding Monte Carlo structural sampling of complex materials. Europhysics Letters, 56(3), 427-433. Lien externe
Barkema, G. T., & Mousseau, N. (2000). High-quality continuous random networks. Physical Review B, 62(8), 4985-4990. Lien externe
Barkema, G. T., & Mousseau, N. (janvier 1998). Exploring structural mechanisms in disordered materials using the activation-relaxation technique [Communication écrite]. Europhysics Conference on Computational Physics (CCP 1998). Publié dans Computer Physics Communications, 121-122. Lien externe
Barkema, G. T., & Mousseau, N. (1998). Identification of relaxation and diffusion mechanisms in amorphous silicon. Physical Review Letters, 81(9), 1865-1868. Lien externe
Barkema, G. T., & Mousseau, N. (1996). Event-based relaxation of continuous disordered systems. Physical Review Letters, 77(21), 4358-4361. Lien externe
Chubynsky, M. V., Vocks, H., Barkema, G. T., & Mousseau, N. (2006). Exploiting memory in event-based simulations. Journal of Non-Crystalline Solids, 352(42-49), 4424-4429. Lien externe
Mousseau, N., Barkema, G. T., Chubynsky, M. V., Derreumaux, P., El-Mellouhi, F., & Vocks, H. (2006). PHYS 4-Applications of activated methods to proteins and materials science. Abstracts of Papers of the American Chemical Society, 232. Non disponible
Mousseau, N., & Barkema, G. T. (2004). Binary continuous random networks. Journal of Physics: Condensed Matter, 16(44), S5183-S5190. Lien externe
Mousseau, N., Barkema, G. T., & Nakhmanson, S. M. (2002). Recent developments in the study of continuous random networks. Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties, 82(2), 171-183. Lien externe
Mousseau, N., & Barkema, G. T. (2001). Fast bond-transposition algorithms for generating covalent amorphous structures. Current Opinion in Solid State & Materials Science, 5(6), 497-502. Lien externe
Mousseau, N., Derreumaux, P., Barkema, G. T., & Malek, R. (2001). Sampling activated mechanisms in proteins with the activation-relaxation technique. Journal of Molecular Graphics and Modelling, 19(1), 78-86. Lien externe
Mousseau, N., & Barkema, G. T. (2000). Activated mechanisms in amorphous silicon: An activation-relaxation-technique study. Physical Review B, 61(3), 1898-1906. Lien externe
Mousseau, N., Barkema, G. T., & Leeuw, S. W. (2000). Elementary mechanisms governing the dynamics of silica. Journal of Chemical Physics, 112(2), 960-964. Lien externe
Mousseau, N., & Barkema, G. T. (1998). Traveling through potential energy landscapes of disordered materials: The activation-relaxation technique. Physical Review E, 57(2), 2419-2424. Lien externe
Mousseau, N., & Barkema, G. T. (décembre 1997). Exploring energy landscapes with the activation-relaxation technique [Communication écrite]. Workshop on Monte Carlo Approach to Biopolymers and Protein Folding, Jülich, Germany. Non disponible
Nakhmanson, S. M., Mousseau, N., Barkema, G. T., Voyles, P. M., & Drabold, D. A. (2001). Models of paracrystalline silicon with a defect-free bandgap. International Journal of Modern Physics B, 15(24-25), 3253-3257. Lien externe
Nakhmanson, S. M., Voyles, P. M., Mousseau, N., Barkema, G. T., & Drabold, D. A. (2001). Realistic models of paracrystalline silicon. Physical Review B, 63(23), 235207 (6 pages). Lien externe
Vocks, H., Chubynsky, M. V., Barkema, G. T., & Mousseau, N. (2005). Activated sampling in complex materials at finite temperature: The properly obeying probability activation-relaxation technique. Journal of Chemical Physics, 123(24), 244707. Lien externe
Vink, R. L. C., Barkema, G. T., van der Weg, W. F., & Mousseau, N. (2001). Fitting the Stillinger-Weber potential to amorphous silicon. Journal of Non-Crystalline Solids, 282(2-3), 248-255. Lien externe
