Normand Mousseau and G. T. Barkema
Article (2000)
Document published while its authors were not affiliated with Polytechnique Montréal
An external link is available for this item| PolyPublie URL: | https://publications.polymtl.ca/41362/ |
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| Journal Title: | Physical Review B (vol. 61, no. 3) |
| Publisher: | American Physical Society |
| DOI: | 10.1103/physrevb.61.1898 |
| Official URL: | https://doi.org/10.1103/physrevb.61.1898 |
| Date Deposited: | 18 Apr 2023 15:22 |
| Last Modified: | 08 Apr 2025 07:05 |
| Cite in APA 7: | Mousseau, N., & Barkema, G. T. (2000). Activated mechanisms in amorphous silicon: An activation-relaxation-technique study. Physical Review B, 61(3), 1898-1906. https://doi.org/10.1103/physrevb.61.1898 |
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