S. M. Nakhmanson, P. M. Voyles, Normand Mousseau, G. T. Barkema and D. A. Drabold
Article (2001)
Document published while its authors were not affiliated with Polytechnique Montréal
An external link is available for this itemPolyPublie URL: | https://publications.polymtl.ca/41366/ |
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Journal Title: | Physical Review B (vol. 63, no. 23) |
Publisher: | American Physical Society |
DOI: | 10.1103/physrevb.63.235207 |
Official URL: | https://doi.org/10.1103/physrevb.63.235207 |
Date Deposited: | 18 Apr 2023 15:21 |
Last Modified: | 25 Sep 2024 16:27 |
Cite in APA 7: | Nakhmanson, S. M., Voyles, P. M., Mousseau, N., Barkema, G. T., & Drabold, D. A. (2001). Realistic models of paracrystalline silicon. Physical Review B, 63(23), 235207 (6 pages). https://doi.org/10.1103/physrevb.63.235207 |
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