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Bratland, K. A., Spila, T., Cahill, D. G., Greene, J. E., & Desjardins, P. (2011). Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy. Journal of Applied Physics, 109(6). Lien externe
Bratland, K. A., Foo, Y. L., Soares, J., Spila, T., Desjardins, P., & Greene, J. E. (2003). Mechanism for Epitaxial Breakdown During Low-Temperature Ge(001) Molecular Beam Epitaxy. Physical Review. B, Condensed Matter and Materials Physics, 67(12), 125322-125322. Lien externe
Foo, Y. L., Bratland, K. A., Cho, B., Desjardins, P., & Greene, J. E. (2003). Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃: surface reaction paths and growth kinetics. Journal of Applied Physics, 93(7), 3944-3950. Lien externe
Bratland, K. A., Foo, Y. L., Desjardins, P., & Greene, J. E. (2003). Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular beam epitaxy. Applied Physics Letters, 82(24), 4247-4247. Lien externe
Foo, Y. L., Bratland, K. A., Cho, B., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2002). C incorporation and segregation during Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃. Surface Science, 513(3), 475-484. Lien externe
