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Documents dont l'auteur est "Amer, Mostafa"

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Aller à : 2024 | 2023 | 2022 | 2021 | 2020 | 2018
Nombre de documents: 14

2024

Amer, M., Abuelnasr, A., Ali, M., Hassan, A., Trigui, A., Ragab, A., Sawan, M., & Savaria, Y. (2024). Enhanced dynamic regulation in Buck Converters: integrating input-voltage feedforward with voltage-mode feedback. IEEE Access, 12, 7310-7328. Disponible

El-Zarif, N., Amer, M., Ali, M., Hassan, A., Oukaira, A., Fayomi, C., & Savaria, Y. (2024). Calibration of ring oscillator-based integrated temperature sensors for power management systems. Sensors, 24(2), 440 (17 pages). Disponible

Abuelnasr, A., Ragab, A., Amer, M., Gosselin, B., & Savaria, Y. (2024). Incremental reinforcement learning for multi-objective analog circuit design acceleration. Engineering Applications of Artificial Intelligence, 129, 107426 (18 pages). Lien externe

2023

Abuelnasr, A., Amer, M., Ali, M., Hassan, A., Gosselin, B., Ragab, A. R. A., & Savaria, Y. (2023). Delay Mismatch Insensitive Dead Time Generator for High-Voltage Switched-Mode Power Amplifiers. IEEE Transactions on Circuits and Systems I: Regular Papers, 70(4), 1555-1565. Disponible

Amer, M., Abuelnasr, A., Hassan, A., Ragab, A., Sawan, M., & Savaria, Y. (2023). A Half-bridge Gate Driver with Self-adjusting and Tunable Dead-time Modes for Efficient Switched-mode Power Systems. IEEE Transactions on Power Electronics, 15 pages. Lien externe

2022

El-Zarif, N., Ali, M., Amer, M., Hassan, A., Oukaira, A., Lakhssassi, A., Fayomi, C. J. B., & Savaria, Y. (juin 2022). Investigation of Different Integrated Temperature Monitoring Sensors for High-Voltage SoC DC-DC Converters [Communication écrite]. 20th IEEE International Interregional NEWCAS Conference (NEWCAS 2022), Quebec City, QC, Canada. Lien externe

2021

Abuelnasr, A., Amer, M., Ragab, A., Gosselin, B., & Savaria, Y. (mai 2021). Causal information prediction for analog circuit design using variable selection methods based on machine learning [Communication écrite]. 53rd IEEE International Symposium on Circuits and Systems (ISCAS 2021), Daegu, Korea (5 pages). Lien externe

Amer, M., Abuelnasr, A., Ragab, A., Hassan, A., Ali, M., Gosselin, B., Sawan, M., & Savaria, Y. (mai 2021). Design and analysis of combined input-voltage feedforward and PI controllers for the buck converter [Communication écrite]. 53rd IEEE International Symposium on Circuits and Systems (ISCAS 2021), Daegu, Korea (5 pages). Lien externe

2020

Hassan, A., Amer, M., Savaria, Y., & Sawan, M. (2020). Fully Integrated Digital GaN-based LSK Demodulator for High-Temperature Applications. IEEE Transactions on Circuits and Systems II: Express Briefs, 67(9), 1579-1583. Disponible

Amer, M., Ali, M., Abuelnasr, A., Hassan, A., Nabavi, M., Savaria, Y., & Sawan, M. (juin 2020). Fully integrated dual-channel gate driver and area efficient pid compensator for surge tolerant power sensor interface [Communication écrite]. 18th IEEE International New Circuits and Systems Conference (NEWCAS 2020), Montréal, Qc, Canada. Lien externe

Abuelnasr, A., Ali, M., Amer, M., Nabavi, M., Hassan, A., Gosselin, B., & Savaria, Y. (octobre 2020). Self-Adjusting Deadtime Generator for High-Efficiency High-Voltage Switched-Mode Power Amplifiers [Communication écrite]. IEEE International Symposium on Circuits and Systems (ISCAS 2020), Sevilla, Spain (5 pages). Lien externe

Hassan, A., Amer, M., Savaria, Y., & Sawan, M. (juin 2020). Towards GaN500-based high temperature ICs: Characterization and modeling up to 600°C [Communication écrite]. 18th IEEE International New Circuits and Systems Conference (NEWCAS 2020), Montréal, Qc, Canada. Lien externe

Karimi, M., Ali, M., Nabavi, M., Hassan, A., Amer, M., Sawan, M., & Gosselin, B. (octobre 2020). A versatile non-overlapping signal generator for efficient power-converters operation [Communication écrite]. 52nd IEEE International Symposium on Circuits and Systems (ISCAS 2020) (5 pages). Lien externe

2018

Amer, M., Hassan, A., Ragab, A., Yacout, S., Savaria, Y., & Sawan, M. (mai 2018). High-Temperature Empirical Modeling for the I-V Characteristics of GaN150-Based HEMT [Communication écrite]. IEEE International Symposium on Circuits and Systems (ISCAS 2018), Florence, Italy. Lien externe

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