High-Temperature Empirical Modeling for the I-V Characteristics of GaN150-Based HEMT

Mostafa Amer, Ahmad Hassan, Ahmed Ragab, Soumaya Yacout, Yvon Savaria and Mohamad Sawan

Paper (2018)

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Department:	Department of Mathematics and Industrial Engineering Department of Electrical Engineering
Research Center:	GR2M - Microelectronics and Microsystems Research Group
PolyPublie URL:	https://publications.polymtl.ca/42451/
Conference Title:	IEEE International Symposium on Circuits and Systems (ISCAS 2018)
Conference Location:	Florence, Italy
Conference Date(s):	2018-05-27 - 2018-05-30
Publisher:	IEEE
DOI:	10.1109/iscas.2018.8351420
Official URL:	https://doi.org/10.1109/iscas.2018.8351420
Date Deposited:	18 Apr 2023 15:02
Last Modified:	25 Sep 2024 16:28

Cite in APA 7:	Amer, M., Hassan, A., Ragab, A., Yacout, S., Savaria, Y., & Sawan, M. (2018, May). High-Temperature Empirical Modeling for the I-V Characteristics of GaN150-Based HEMT [Paper]. IEEE International Symposium on Circuits and Systems (ISCAS 2018), Florence, Italy. https://doi.org/10.1109/iscas.2018.8351420
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