Michel Bégin, Fadhel M. Ghannouchi, L. Selmi and B. Riccò
Paper (1994)
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| Additional Information: |
Nom historique du département: Département de génie électrique et de génie informatique; Groupe de recherche: Laboratoire de Recherches Micro-Ondes |
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| Department: |
Department of Electrical Engineering Department of Computer Engineering and Software Engineering |
| Research Center: | Other |
| ISBN: | 0780318803 |
| PolyPublie URL: | https://publications.polymtl.ca/43073/ |
| Conference Title: | IEEE Instrumentation and Measurement Technology Conference (IMTC 1994) |
| Conference Location: | Hamamatsu, Japan |
| Conference Date(s): | 1994-05-10 - 1994-05-12 |
| Publisher: | IEEE |
| DOI: | 10.1109/imtc.1994.351974 |
| Official URL: | https://doi.org/10.1109/imtc.1994.351974 |
| Date Deposited: | 18 Apr 2023 15:25 |
| Last Modified: | 08 Apr 2025 07:07 |
| Cite in APA 7: | Bégin, M., Ghannouchi, F. M., Selmi, L., & Riccò, B. (1994, May). Instantaneous S parameters measurements of MESFETs under burst bias conditions [Paper]. IEEE Instrumentation and Measurement Technology Conference (IMTC 1994), Hamamatsu, Japan. https://doi.org/10.1109/imtc.1994.351974 |
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