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GaN-based LSK demodulators for wireless data receivers in high-temperature applications

Ahmad Hassan, Mohamed Ali, Yvon Savaria and Mohamad Sawan

Article (2019)

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GaN (gallium nitride)-based fully-integrated demodulators are presented. These modules, intended for wireless applications, target high-temperature (HT) environments including monitoring devices in aerospace. The presented demodulators are dedicated to recover Load-shift keying signals modulating a low carrier frequency to maximize power transfer efficiency and increase data transmission rate through metallic barriers. Logic gates are implemented and successfully tested at HT exceeding 400 °C. Proposed demodulators are built from half and full bridge rectifiers, comparators, voltage references and inverters, and operate at a minimum carrier frequency (fc) of 50 kHz. A demodulator based on a digital topology is proposed to cover MHz range fc. A complementary ±14 V supply voltage is required to operate the circuits. Reported post-layout simulation results validate the functionality and performance offered by the proposed demodulators over the 25 °C–400 °C temperature range. Also, a complete chip layout has been done, where the introduced demodulators occupy 10 mm² of a GaN die area.

Uncontrolled Keywords

High-temperature applications; wireless data transmission; GaN HEMT; integrated circuits; demodulation system

Subjects: 2500 Electrical and electronic engineering > 2500 Electrical and electronic engineering
Department: Department of Electrical Engineering
Research Center: GR2M - Microelectronics and Microsystems Research Group
Funders: CRSNG/NSERC, CMC Microsystems, NRC/CNRC, SAFRAN, Airbus Defence and space
Grant number: STPGP463394
PolyPublie URL: https://publications.polymtl.ca/41945/
Journal Title: Microelectronics Journal (vol. 84)
Publisher: Elsevier
DOI: 10.1016/j.mejo.2019.01.006
Official URL: https://doi.org/10.1016/j.mejo.2019.01.006
Date Deposited: 18 Apr 2023 15:02
Last Modified: 20 May 2023 04:16
Cite in APA 7: Hassan, A., Ali, M., Savaria, Y., & Sawan, M. (2019). GaN-based LSK demodulators for wireless data receivers in high-temperature applications. Microelectronics Journal, 84, 129-135. https://doi.org/10.1016/j.mejo.2019.01.006


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