GaN-based LSK demodulators for wireless data receivers in high-temperature applications

GaN (gallium nitride)-based fully-integrated demodulators are presented. These modules, intended for wireless applications, target high-temperature (HT) environments including monitoring devices in aerospace. The presented demodulators are dedicated to recover Load-shift keying signals modulating a low carrier frequency to maximize power transfer efficiency and increase data transmission rate through metallic barriers. Logic gates are implemented and successfully tested at HT exceeding 400 °C. Proposed demodulators are built from half and full bridge rectifiers, comparators, voltage references and inverters, and operate at a minimum carrier frequency (fc) of 50 kHz. A demodulator based on a digital topology is proposed to cover MHz range fc. A complementary ±14 V supply voltage is required to operate the circuits. Reported post-layout simulation results validate the functionality and performance offered by the proposed demodulators over the 25 °C–400 °C temperature range. Also, a complete chip layout has been done, where the introduced demodulators occupy 10 mm² of a GaN die area.

Mots clés

• High-temperature applications
• wireless data transmission
• GaN HEMT
• integrated circuits
• demodulation system