High-temperature modeling of the I-V characteristics of GaN150 HEMT using machine learning techniques

Ahmed Abubakr, Ahmad Hassan, Ahmed Ragab, Soumaya Yacout, Yvon Savaria and Mohamad Sawan

Paper (2018)

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Department:	Department of Mathematics and Industrial Engineering Department of Electrical Engineering
Research Center:	GR2M - Microelectronics and Microsystems Research Group
ISBN:	9781538648810
PolyPublie URL:	https://publications.polymtl.ca/39515/
Conference Title:	IEEE International Symposium on Circuits and Systems (ISCAS 2018)
Conference Location:	Florence, Italie
Conference Date(s):	2018-05-27 - 2018-05-30
Publisher:	IEEE
DOI:	10.1109/iscas.2018.8351508
Official URL:	https://doi.org/10.1109/iscas.2018.8351508
Date Deposited:	18 Apr 2023 15:02
Last Modified:	08 Apr 2025 12:22

Cite in APA 7:	Abubakr, A., Hassan, A., Ragab, A., Yacout, S., Savaria, Y., & Sawan, M. (2018, May). High-temperature modeling of the I-V characteristics of GaN150 HEMT using machine learning techniques [Paper]. IEEE International Symposium on Circuits and Systems (ISCAS 2018), Florence, Italie (5 pages). https://doi.org/10.1109/iscas.2018.8351508
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