Ahmed Abubakr, Ahmad Hassan, Ahmed Ragab, Soumaya Yacout
, Yvon Savaria
and Mohamad Sawan
Paper (2018)
An external link is available for this itemDepartment: |
Department of Mathematics and Industrial Engineering Department of Electrical Engineering |
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Research Center: | GR2M - Microelectronics and Microsystems Research Group |
PolyPublie URL: | https://publications.polymtl.ca/39515/ |
Conference Title: | IEEE International Symposium on Circuits and Systems (ISCAS 2018) |
Conference Location: | Florence, Italie |
Conference Date(s): | 2018-05-27 - 2018-05-30 |
Publisher: | IEEE |
DOI: | 10.1109/iscas.2018.8351508 |
Official URL: | https://doi.org/10.1109/iscas.2018.8351508 |
Date Deposited: | 18 Apr 2023 15:02 |
Last Modified: | 25 Sep 2024 16:24 |
Cite in APA 7: | Abubakr, A., Hassan, A., Ragab, A., Yacout, S., Savaria, Y., & Sawan, M. (2018, May). High-temperature modeling of the I-V characteristics of GaN150 HEMT using machine learning techniques [Paper]. IEEE International Symposium on Circuits and Systems (ISCAS 2018), Florence, Italie (5 pages). https://doi.org/10.1109/iscas.2018.8351508 |
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