T. Ohtsuki, N. Peyghambarian, S. Honkanen and S. Iraj Najafi
Article (1995)
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| Additional Information: | Nom historique du département: Département de génie électrique et de génie informatique |
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| Department: |
Department of Electrical Engineering Department of Computer Engineering and Software Engineering |
| PolyPublie URL: | https://publications.polymtl.ca/31872/ |
| Journal Title: | Journal of Applied Physics (vol. 78, no. 6) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.359938 |
| Official URL: | https://doi.org/10.1063/1.359938 |
| Date Deposited: | 18 Apr 2023 15:25 |
| Last Modified: | 08 Apr 2025 06:52 |
| Cite in APA 7: | Ohtsuki, T., Peyghambarian, N., Honkanen, S., & Najafi, S. I. (1995). Gain characteristics of a high concentration Er³⁺ doped phosphate glass waveguide. Journal of Applied Physics, 78(6), 3617-3621. https://doi.org/10.1063/1.359938 |
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