J.-S. Chun, J. R. A. Carlsson, Patrick Desjardins, D. B. Bergstrom, I. Petrov, J. E. Greene, C. Lavoie et C. , jr. Cabral
Article de revue (2001)
Un lien externe est disponible pour ce document| Département: | Département de génie physique |
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| URL de PolyPublie: | https://publications.polymtl.ca/27503/ |
| Titre de la revue: | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena (vol. 19, no 1) |
| Maison d'édition: | American Vacuum Society |
| DOI: | 10.1116/1.1322648 |
| URL officielle: | https://doi.org/10.1116/1.1322648 |
| Date du dépôt: | 18 avr. 2023 15:21 |
| Dernière modification: | 08 avr. 2025 02:17 |
| Citer en APA 7: | Chun, J.-S., Carlsson, J. R. A., Desjardins, P., Bergstrom, D. B., Petrov, I., Greene, J. E., Lavoie, C., & Cabral, C. (2001). Synchrotron x-ray diffraction and transmission electon microscopy studies of interfacial reaction paths and kinetics annealing of fully-002-textured Al/TiN bilayers. Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 19(1), 182-191. https://doi.org/10.1116/1.1322648 |
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