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Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source

Yves Gagnon, Michel Meunier and Yvon Savaria

Patent (2001)

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Additional Information: Autres numéros: CA2277607, CA2671386, EP1188178, WO2000077836 (demande)
Department: Department of Engineering Physics
Department of Electrical Engineering
PolyPublie URL: https://publications.polymtl.ca/27397/
Official URL: https://patents.google.com/patent/US6329272
Date Deposited: 18 Apr 2023 15:21
Last Modified: 05 Apr 2024 11:14
Cite in APA 7: Gagnon, Y., Meunier, M., & Savaria, Y. (2001). Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source. (Patent no. US6329272). https://patents.google.com/patent/US6329272

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