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Daoust, P., Del Vecchio, P., Rotaru, N., Dubé-Valade, A., Assali, S., Attiaoui, A., Daligou, G. T. E. G., Koelling, S., Luo, L., Rahier, E., & Moutanabbir, O. (2025). Reduced Pressure Chemical Vapour Deposition Growth of Nuclear Spin-Free 70Ge/28Si70Ge Heterostructures on Industrial Si-Ge Substrates. Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM), MA2025-01(36), 1717 (1 page). Lien externe
Daoust, P., Rotaru, N., Dubé-Valade, A., Koelling, S., Rahier, E., Del Vecchio, P., Biswas, D., Edwards, M., Tanvir, M., Sajadi, E., Salfi, J., & Moutanabbir, O. (novembre 2025). Isotopically pure 70Ge/28Si70Ge heterostructures grown on SiGe-buffered Si wafers [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible
Kaul, P. B., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Del Vecchio, P., Concepción, O., Ikonić, Z., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. (2025). GeSn quantum wells as a platform for spin-resolved hole transport. Communications Materials, 6(1), 216. Lien externe
Kaul, P., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Del Vecchio, P., Concepción Díaz, O., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. M. (novembre 2025). Characterization of a two-dimensional hole gas in a GeSn quantum well system [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible
Kaul, P., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. (octobre 2025). Towards 1-D conduction in gate-defined quantum point contacts on GeSn quantum wells [Résumé]. ASPIRE Workshop on Quantum and Topological Materials (ASPIRE 2025), Sendai, Japan (2 pages). Lien externe
Lemieux-Leduc, C., Atalla, M. R. M., Assali, S., Rotaru, N., Brodeur, J., Kéna-Cohen, S., Moutanabbir, O., & Peter, Y.-A. (2025). Waveguide-Coupled Mid-Infrared GeSn Membrane Photodetectors on Silicon-on-Insulator. ACS Photonics, 12(11), 6343-6351. Lien externe
Rotaru, N., Del Vecchio, P., & Moutanabbir, O. (novembre 2025). Direct Bandgap Group IV Hole Spin Qubits [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible
Rotaru, N., Del Vecchio, P., & Moutanabbir, O. (2025). Hole spin in direct bandgap germanium-tin quantum dot. Physical review B, 112(12), 125428 (12 pages). Lien externe
