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Bratland, K. A., Foo, Y. L., Desjardins, P., & Greene, J. E. (2003). Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular beam epitaxy. Applied Physics Letters, 82(24), 4247-4247. Lien externe
Bratland, K. A., Foo, Y. L., Soares, J., Spila, T., Desjardins, P., & Greene, J. E. (2003). Mechanism for Epitaxial Breakdown During Low-Temperature Ge(001) Molecular Beam Epitaxy. Physical Review. B, Condensed Matter and Materials Physics, 67(12), 125322-125322. Lien externe
Chicoine, M., Roorda, S., Masut, R. A., & Desjardins, P. (2003). Nanocavities in He Implanted InP. Journal of Applied Physics, 94(9), 6116-6121. Lien externe
Foo, Y. L., Bratland, K. A., Cho, B., Desjardins, P., & Greene, J. E. (2003). Si₁₋yCy/Si(001) gas-source molecular beam epitaxy from Si₂H₆ and CH₃SiH₃: surface reaction paths and growth kinetics. Journal of Applied Physics, 93(7), 3944-3950. Lien externe
Malikova, L., Pollak, F. H., Masut, R. A., Desjardins, P., & Mourokh, L. G. (2003). Temperature Dependent Contactless Electroreflectance Study of Intersubband Transitions in a Self-Assembled InAs/InP (001) Quantum Dot Structure. Journal of Applied Physics, 94(8), 4995-4998. Lien externe
Shtinkov, N., Desjardins, P., & Masut, R. A. (2003). Empirical tight-binding model for the electronic structure of dilute GaNAs alloys. Physical Review. B, Condensed Matter and Materials Physics, 67(8), 081202. Lien externe
Shtinkov, N., Desjardins, P., & Masut, R. A. (décembre 2002). Lateral confinement of carriers in ultrathin semiconductor quantum wells [Communication écrite]. 4th International Conference on Low Dimensional Structures and Devices (LDSD 2002), Fortaleza, Brazil. Publié dans Microelectronics Journal, 34(5-8). Lien externe
Spila, T., Desjardins, P., D'Arcy-Gall, J., Twesten, R. D., & Greene, J. E. (2003). Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1-xGex/Si(001) growth from hybride precursors. Journal of Applied Physics, 93(4), 1918-1925. Lien externe
