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Glass, G., Kim, H., Desjardins, P., Taylor, N., Spila, T., Lu, Q., & Greene, J. E. (2000). Ultra-high B doping (< 10^22 cm-3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport. Physical review, 61(11), 7628-7644. Lien externe
Kim, H., Glass, G., Soares, J. A. N. T., Desjardins, P., & Greene, J. E. (2000). Arsenic incorporation during Si(001): As gas-source molecular-beam epitaxy from Si2H6 and AsH3: effects on film growth kinetics. Journal of Applied Physics, 88(12), 7067-7078. Lien externe
Vailionis, A., Cho, B., Glass, G., Desjardins, P., Cahill, D. G., & Greene, J. E. (2000). Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001). Physical Review Letters, 85(17), 3672-3675. Lien externe
