Documents publiés en "1991"

Bekkay, T., Piyakis, K., Diawara, Y., Sacher, E., Yelon, A., & Currie, J. F. (1991). Band bending and Fermi level shifts in phosphorus-doped hydrogenated amorphous silicon studied by X-ray photoelectron spectroscopy. Surface Science, 258(1-3), 190-196. Lien externe

Gagnon, G., Houdayer, A., Currie, J. F., & Azelmad, A. (1991). Rapid thermal annealing effect on near-surface stoichiometry of GaAs by heavy-ion Rutherford backscattering [Commentaire ou lettre]. Journal of Applied Physics, 70(2), 1036-1038. Lien externe

Leonelli, R., Sundararaman, C. S., & Currie, J. F. (1991). Response to "Comment on 'Photoluminescence study of sulfide layers on p-tynpe InP'" [Commentaire ou lettre]. Applied Physics Letters, 59(14), 1796-1797. Lien externe

Sundararaman, C. S., & Currie, J. F. (décembre 1991). Rapid thermally annealed ohmic contacts to high temperature Zn implanted InP [Communication écrite]. Emerging Optoelectronic Technologies, Bangalore, India. Lien externe

Sundararaman, C. S., Lafontaine, H., Poulin, S., Mouton, A., & Currie, J. F. (1991). Reactive sputtering of InP in N₂ and N₂/O₂ plasmas. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, 9(3), 1433-1439. Lien externe