Documents dont l'auteur est "Del Vecchio, Patrick"

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Nombre de documents: 15

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Assali, S., Attiaoui, A., Del Vecchio, P., Rotaru, N., & Moutanabbir, O. (2024). Engineering Sn-Based Group IV Quantum Materials. Meeting abstracts (Electrochemical Society. CD-ROM), MA2024-02(32), 2323-2323. Lien externe

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Del Vecchio, P., Bosco, S., Loss, D., & Moutanabbir, O. (2026). Fully tunable strong spin orbit interactions in light hole germanium quantum channels. Communications Physics, 7 pages. Disponible

Del Vecchio, P. (2026). Generated data for the article "Fully tunable strong spin-orbit interactions in light hole germanium quantum channels" [Ensemble de données]. Lien externe

Daoust, P., Rotaru, N., Biswas, D., Koelling, S., Rahier, E., Dubé-Valade, A., Del Vecchio, P., Edwards, M. S., Tanvir, M., Sajadi, E., Salfi, J., & Moutanabbir, O. (2026). Nuclear Spin‐Free ⁷⁰Ge/²⁸Si⁷⁰Ge Quantum Well Heterostructures Grown on Industrial SiGe‐Buffered Wafers. Advanced Science. Lien externe

Daoust, P., Del Vecchio, P., Rotaru, N., Dubé-Valade, A., Assali, S., Attiaoui, A., Daligou, G. T. E. G., Koelling, S., Luo, L., Rahier, E., & Moutanabbir, O. (2025). Reduced Pressure Chemical Vapour Deposition Growth of Nuclear Spin-Free 70Ge/28Si70Ge Heterostructures on Industrial Si-Ge Substrates. Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM), MA2025-01(36), 1717 (1 page). Lien externe

Del Vecchio, P., Bosco, S., Loss, D., & Moutanabbir, O. (novembre 2025). Spin-orbit interactions of light holes in Ge/GeSn planar systems [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible

Daoust, P., Rotaru, N., Dubé-Valade, A., Koelling, S., Rahier, E., Del Vecchio, P., Biswas, D., Edwards, M., Tanvir, M., Sajadi, E., Salfi, J., & Moutanabbir, O. (novembre 2025). Isotopically pure 70Ge/28Si70Ge heterostructures grown on SiGe-buffered Si wafers [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible

Del Vecchio, P. (2024). Dynamics and Spin-Orbit Coupling Properties of Light Holes Confined in Group-IV Semiconductor Heterostructures [Thèse de doctorat, Polytechnique Montréal]. Disponible

Daligou, G. T. E. G., Soref, R., Attiaoui, A., Hossain, J., Atalla, M., Del Vecchio, P., & Moutanabbir, O. (2023). Group IV mid-infrared thermophotovoltaic cells on silicon. IEEE Journal of Photovoltaics, 13(5), 728-735. Lien externe

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Kaul, P., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Del Vecchio, P., Concepción Díaz, O., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. M. (novembre 2025). Characterization of a two-dimensional hole gas in a GeSn quantum well system [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible

Kaul, P. B., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Del Vecchio, P., Concepción, O., Ikonić, Z., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. (2025). GeSn quantum wells as a platform for spin-resolved hole transport. Communications Materials, 6(1), 216. Lien externe

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Moutanabbir, O., Assali, S., Attiaoui, A., Daligou, G. T. E. G., Daoust, P., Del Vecchio, P., Koelling, S., Luo, L., & Rotaru, N. (2023). Nuclear Spin-Depleted, Isotopically Enriched⁷⁰Ge/²⁸ Si⁷⁰Ge Quantum Wells. Advanced Materials, 2305703 (7 pages). Lien externe

Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S., & Assali, S. (mai 2019). Germanium-tin semiconductors: A versatile silicon-compatible platform [Résumé]. Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7), Kyoto, Japan (1 page). Lien externe

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Rotaru, N., Del Vecchio, P., & Moutanabbir, O. (2025). Hole spin in direct bandgap germanium-tin quantum dot. Physical review B, 112(12), 125428 (12 pages). Lien externe

Rotaru, N., Del Vecchio, P., & Moutanabbir, O. (novembre 2025). Direct Bandgap Group IV Hole Spin Qubits [Communication écrite]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Non disponible

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