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Dion, C., Desjardins, P., Shtinkov, N., Schiettekatte, F., Poole, P. J., & Raymond, S. (2008). Effects of grown-in defects on interdiffusion dynamics in inAs/InP(001) quantum dots subjected to rapid thermal annealing. Journal of Applied Physics, 103(8), 083526-083526. Lien externe
Dion, C., Desjardins, P., Shtinkov, N., Robertson, M. D., Schiettekatte, F., Poole, P. J., & Raymond, S. (2008). Intermixing during growth of InAs self-assembled quantum dots in InP: a photoluminescence and tight-binding investigation. Physical Review. B, Condensed Matter and Materials Physics, 77(7), 075338-1. Lien externe
Levesque, A., Shtinkov, N., Masut, R. A., & Desjardins, P. (2008). Self-Organization of InAs/InP Quantum Dot Multilayers: Pseudophase Diagram Describing the Transition From Aligned to Antialigned Structures. Physical Review Letters, 100(4). Lien externe
Dion, C., Desjardins, P., Schiettekatte, F., Chicoine, M., Robertson, M. D., Shtinkov, N., Poole, P. J., Wu, X., & Raymond, S. (2008). Vacancy-Mediated Intermixing in Inas/Inp(001) Quantum Dots Subjected to Ion Implantation. Journal of Applied Physics, 104(4), 043527-1. Lien externe
Beaudry, J., Shtinkov, N., Masut, R. A., Desjardins, P., & Rioboo, R. J. J. (2007). Compositional dependence of the elastic constants of dilute GaAs₁₋ₓNₓ alloys. Journal of Applied Physics, 101(11), 113507-1. Lien externe
Lanacer, A., Shtinkov, N., Desjardins, P., Masut, R. A., & Leonelli, R. (2007). Optical Emission From InAs/InP Self-Assembled Quantum Dots: Evidence for As/P Intermixing. Semiconductor Science and Technology, 22(12), 1282-1286. Lien externe
Shtinkov, N., Desjardins, P., Masut, R. A., & Cote, M. (2006). Nitrogen incorporation and lattice constant of strained dilute GaAs₁₋ₓNₓ layers on GaAs (001): an ab initio study. Physical Review. B, Condensed Matter and Materials Physics, 74(3), 035211 (8 pages). Lien externe
Bergeron, D., Shtinkov, N., Masut, R. A., & Desjardins, P. (2005). Green's function matching method for one- and zero-dimensional heterostructures. Physical Review. B, Condensed Matter and Materials Physics, 72(24), 245308. Lien externe
Shtinkov, N., Turcotte, S., Beaudry, J. N., Desjardins, P., & Masut, R. A. (2004). Electronic and Optical Properties of Gaasn/Gaas Quantum Wells: a Tight-Binding Study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(4), 1606-1609. Lien externe
Turcotte, S., Shtinkov, N., Desjardins, P., Masut, R. A., & Leonelli, R. (2004). Empirical Tight-Binding Calculations of the Electronic Structure of Dilute III-V-N Semiconductor Alloys. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 776-780. Lien externe
Shtinkov, N., Desjardins, P., Masut, R. A., & Vlaev, S. J. (2004). Lateral confinement and band mixing in ultrathin semiconductor quantum wells with steplike interfaces. Physical Review. B, Condensed Matter and Materials Physics, 70(15), 155302. Lien externe
Shtinkov, N., Desjardins, P., & Masut, R. A. (2003). Empirical tight-binding model for the electronic structure of dilute GaNAs alloys. Physical Review. B, Condensed Matter and Materials Physics, 67(8), 081202. Lien externe
Shtinkov, N., Desjardins, P., & Masut, R. A. (décembre 2002). Lateral confinement of carriers in ultrathin semiconductor quantum wells [Communication écrite]. 4th International Conference on Low Dimensional Structures and Devices (LDSD 2002), Fortaleza, Brazil. Publié dans Microelectronics Journal, 34(5-8). Lien externe
Shtinkov, N., Desjardins, P., & Masut, R. A. (2002). Electronic states of ultrathin InAs/InP (001) quantum wells: a tight-binding study of the effects of band offset, strain, and intermixing. Physical Review. B, Condensed Matter and Materials Physics, 66(19), 195303 (8 pages). Lien externe
