<  Back to the Polytechnique Montréal portal

Items where Author is "Nicolas, J."

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Authors | Publication Date | Document subtype | No Grouping
Number of items: 6.

Article

Assali, S., Koelling, S., Abboud, Z., Nicolas, J., Attiaoui, A., & Moutanabbir, O. (2022). 500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon. Journal of Applied Physics, 132(17), 175304 (9 pages). External link

Assali, S., Attiaoui, A., Koelling, S., Atalla, M. R. M., Kumar, A., Nicolas, J., Chowdhury, F. A., Lemieux-Leduc, C., & Moutanabbir, O. (2022). Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics. Journal of Applied Physics, 132(19), 11 pages. External link

Assali, S., Nicolas, J., & Moutanabbir, O. (2019). Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation. Journal of Applied Physics, 125(2). External link

Assali, S., Elsayed, M., Nicolas, J., Liedke, M. O., Wagner, A., Butterling, M., Krause-Rehberg, R., & Moutanabbir, O. (2019). Vacancy complexes in nonequilibrium germanium-tin semiconductors. Applied Physics Letters, 114(25), 6 pages. External link

Assali, S., Nicolas, J., Mukherjee, S., Dijkstra, A., & Moutanabbir, O. (2018). Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5 µm room-temperature optical emission. Applied Physics Letters, 112(25), 5 pages. External link

Technical Report

Beaudry, C., Boyer, P., Camarero, R., Chaouki, J., Comeau, Y., Dansereau, J., Desjardins, P., Dupuis, C., Hurteau, R., Nicolas, J., & Pierre, S. (2010). Vers la création d'un microprogramme de 3e cycle visant l'enrichissement des habiletés des doctorats. (Technical Report). Unavailable

List generated on: Fri Feb 23 08:06:58 2024 EST