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Items where Author is "Jordan-Sweet, J."

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Zhang, Z., Yang, B., Zhu, Y., Gaudet, S., Rossnagel, S., Kellock, A. J., Ozcan, A., Murray, C., Desjardins, P., Zhang, S.-L., Jordan-Sweet, J., & Lavoie, C. (2010). Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1-xPtx silicide films. Applied Physics Letters, 97(25), 252108-252108. External link

Zhang, Z., Zhang, S.-L., Yang, B., Zhu, Y., Rossnagel, S. M., Gaudet, S., Kellock, A. J., Jordan-Sweet, J., & Lavoie, C. (2010). Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1-xPtx on Si substrate. Applied Physics Letters, 96(7), 071915-071915. External link

Kittl, J. A., Pawlak, M. A., Torregiani, C., Lauwers, A., Demeurisse, C., Vrancken, C., Absil, P. P., Biesemans, S., Coia, C., Detavernier, C., Jordan-Sweet, J., & Lavoie, C. (2007). Transient and End Silicide Phase Formation in Thin Film Ni/Polycrystalline-Si Reactions for Fully Silicided Gate Applications. Applied Physics Letters, 91(17). External link


Lavoie, C., Purtell, R., Coïa, C., Detavernier, C., Desjardins, P., Jordan-Sweet, J., Cabral, C. J., & D'Heurle, F. M. (2002, January). In situ monitoring of thin film reactions during rapid thermal annealing: nickel silicide formation [Paper]. Rapid thermal and other short-time processing technologies III Electrochemical Society. External link

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