Monter d'un niveau |
Chen, W. C., Kemp, M., Hamel, L.-A., & Yelon, A. (2000). Rapid Relaxation and Electronic Properties of a-Si : H. Journal of Non-Crystalline Solids, 277(2-3), 219-224. Lien externe
Chen, W. C., Hamel, L.-A., Kemp, M., & Yelon, A. (1999). Modelling of Drift Mobility Experiments on a-Si:H. MRS Proceedings, 557, 433-438. Lien externe
Chen, W. C., Hamel, L.-A., & Yelon, A. (1997). Monte Carlo simulations of Meyer-Neldel effect on carrier time-of-flight in a-Si:H. Journal of Non-Crystalline Solids, 220(2-3), 254-260. Lien externe