Wen Chao Chen, Mathieu Kemp, Louis-André Hamel and Arthur Yelon
Article (2000)
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| Additional Information: | Nom historique du département: Département de génie physique et de génie des matériaux |
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| Department: | Department of Engineering Physics |
| Research Center: | GCM - Thin Film Physics and Technology Research Group |
| PolyPublie URL: | https://publications.polymtl.ca/28275/ |
| Journal Title: | Journal of Non-Crystalline Solids (vol. 277, no. 2-3) |
| Publisher: | Elsevier |
| DOI: | 10.1016/s0022-3093(00)00317-3 |
| Official URL: | https://doi.org/10.1016/s0022-3093%2800%2900317-3 |
| Date Deposited: | 18 Apr 2023 15:21 |
| Last Modified: | 25 Sep 2024 16:09 |
| Cite in APA 7: | Chen, W. C., Kemp, M., Hamel, L.-A., & Yelon, A. (2000). Rapid Relaxation and Electronic Properties of a-Si : H. Journal of Non-Crystalline Solids, 277(2-3), 219-224. https://doi.org/10.1016/s0022-3093%2800%2900317-3 |
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