Documents dont l'auteur est "Bakkers, Erik P. A. M."

Article de revue

Badawy, G., Zhang, B., Rauch, T., Momand, J., Koelling, S., Jung, J., Gazibegovic, S., Moutanabbir, O., Kooi, B. J., Botti, S., Verheijen, M. A., Frolov, S. M., & Bakkers, E. P. A. M. (2022). Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires. Advanced Science, 9(12), 2105722 (8 pages). Lien externe

Schellingerhout, S. G., de Jong, E. J., Gomanko, M., Guan, X., Jiang, Y., Hoskam, M. S. M., Jung, J., Koelling, S., Moutanabbir, O., Verheijen, M. A., Frolov, S. M., & Bakkers, E. P. A. M. (2022). Growth of PbTe nanowires by molecular beam epitaxy. Materials for Quantum Technology, 2(1), 015001. Lien externe

Bergamaschini, R., Plantenga, R. C., Albani, M., Scalise, E., Ren, Y., Hauge, H. I. T., Kölling, S., Montalenti, F., Bakkers, E. P. A. M., Verheijen, M. A., & Miglio, L. (2021). Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting. Nanoscale, 13(20), 9436-9445. Lien externe

Fadaly, E. M. T., Dijkstra, A., Suckert, J. R., Ziss, D., van Tilburg, M. A. J., Mao, C., Ren, Y., van Lange, V. T., Korzun, K., Kölling, S., Verheijen, M. A., Busse, D., Rödl, C., Furthmüller, J., Bechstedt, F., Stangl, J., Finley, J. J., Botti, S., Haverkort, J. E. M., & Bakkers, E. P. A. M. (2020). Direct-bandgap emission from hexagonal Ge and SiGe alloys. Nature, 580(7802), 205-209. Lien externe

Assali, S., Bergamaschini, R., Scalise, E., Verheijen, M. A., Albani, M., Dijkstra, A., Li, A., Koelling, S., Bakkers, E. P. A. M., Montalenti, F., & Miglio, L. (2020). Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires. ACS Nano, 14(2), 2445-2455. Lien externe

Assali, S., Albani, M., Bergamaschini, R., Verheijen, M., Li, A., Kölling, S., Gagliano, L., Bakkers, E. P. A. M., & Miglio, L. (2019). Strain engineering in Ge/GeSn core/shell nanowires. Applied Physics Letters, 115(11), 5 pages. Lien externe

Communication écrite

Kölling, S., Plantenga, R. C., Hauge, H. I. T., Ren, Y., Li, A., Verheijen, M. A., Conesa Boj, S., Assali, S., Koenraad, P. M., & Bakkers, E. P. A. M. (octobre 2016). Impurity and defect monitoring in hexagonal Si and SiGe nanocrystals [Communication écrite]. Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (PRiME 2016)/230th ECS Meeting, Honolulu, HI. Publié dans ECS Transactions, 75(8). Lien externe