Roberto Bergamaschini, Rianne C. Plantenga, Marco Albani, Emilio Scalise, Yizhen Ren, Håkon Ikaros T. Hauge, Sebastian Kölling, Francesco Montalenti, Erik P. A. M. Bakkers, Marcel A. Verheijen and Leonida Miglio
Article (2021)
Document published while its authors were not affiliated with Polytechnique Montréal
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/47309/ |
| Journal Title: | Nanoscale (vol. 13, no. 20) |
| Publisher: | The Royal Society of Chemistry |
| DOI: | 10.1039/d0nr08051a |
| Official URL: | https://doi.org/10.1039/d0nr08051a |
| Date Deposited: | 18 Apr 2023 14:59 |
| Last Modified: | 25 Sep 2024 16:35 |
| Cite in APA 7: | Bergamaschini, R., Plantenga, R. C., Albani, M., Scalise, E., Ren, Y., Hauge, H. I. T., Kölling, S., Montalenti, F., Bakkers, E. P. A. M., Verheijen, M. A., & Miglio, L. (2021). Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting. Nanoscale, 13(20), 9436-9445. https://doi.org/10.1039/d0nr08051a |
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