Documents dont l'auteur est "Arsenault, C. J."

1993

Beaudoin, M., Meunier, M., & Arsenault, C. J. (1993). Blueshift of the optical band gap: Implications for the quantum confinement effect ina-Si:H/a-SiNₓ:H multilayers. Physical Review B, 47(4), 2197-2202. Lien externe

1992

Beaudoin, M., Meunier, M., Muschik, T., Schwarz, R., Arsenault, C. J., Beaulieu, M., & Grimal, O. (août 1992). Interfaces effectives et pentes d'Urbach de multicouches a-Si:H/a-SiNₓ:H [Effective interfaces and Urbach slope in a-Si:H/a-SiNₓ:H multilayers]. [Communication écrite]. 6e Conférence canadienne sur la technologie des semiconducteurs, Ottawa, Ontario. Publié dans Canadian Journal of Physics, 70(10-11). Lien externe

1991

Arsenault, C. J., Meunier, M., Beaudoin, M., & Movaghar, B. (1991). Electronic transport through a-Si:H/a-SiNₓ:H single and double barrier structures. Journal of Non-Crystalline Solids, 137-138, 1111-1114. Lien externe

Beaudoin, M., Arsenault, C. J., & Meunier, M. (1991). On the blue-shift of the optical bandgap of a-Si:H/a-SiNₓ:H multilayer structures. Journal of Non-Crystalline Solids, 137-138, 1099-1102. Lien externe

Arsenault, C. J., Meunier, M., Beaudoin, M., & Movaghar, B. (1991). Perpendicular transport ina-Si:H/a-SiNₓ:H single- and double-barrier structures. Physical Review B, 44(20), 11521-11524. Lien externe

1989

Beaudoin, M., Arsenault, C. J., Izquierdo, R., & Meunier, M. (1989). Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by X-ray photoelectron spectroscopy. Applied Physics Letters, 55(25), 2640-2640. Lien externe

Arsenault, C. J., & Meunier, M. (1989). Proposed new resonant tunneling structures with impurity planes of deep levels in barriers. Journal of Applied Physics, 66(9), 4305-4311. Lien externe

Arsenault, C. J., & Meunier, M. (1989). Resonant-tunneling lifetime comparison between double-barrier and δ-doped barrier structures. Physical Review B, 39(12), 8739-8742. Lien externe