Documents dont l'auteur est "Jay, Antoine"

Pour citer ou exporter
Nombre de documents: 5

Auteur ou autrice

Gunde, M., Jay, A., Poberžnik, M., Salles, N., Richard, N., Landa, G., Mousseau, N., Martin-Samos, L., & Hémeryck, A. (2024). Exploring potential energy surfaces to reach saddle points above convex regions. The Journal of Chemical Physics, 160(23), 232501 (13 pages). Lien externe

Jay, A., Gunde, M., Salles, N., Poberžnik, M., Martin-Samos, L., Richard, N., de Gironcoli, S., Mousseau, N., & Hémeryck, A. (2022). Activation–Relaxation Technique: An efficient way to find minima and saddle points of potential energy surfaces. Computational Materials Science, 209, 111363 (9 pages). Lien externe

Jarrin, T., Jay, A., Raine, M., Mousseau, N., Hémeryck, A., & Richard, N. (2020). Simulation of Single Particle Displacement Damage in Si₁₋ₓGeₓ Alloys—Interaction of Primary Particles With the Material and Generation of the Damage Structure. IEEE Transactions on Nuclear Science, 67(7), 1273-1283. Lien externe

Jay, A., Hémeryck, A., Richard, N., Martin-Samos, L., Raine, M., Le Roch, A., Mousseau, N., Goiffon, V., Paillet, P., Gaillardin, M., & Magnan, P. (2018). Simulation of Single-Particle Displacement Damage in Silicon. Part III: First Principle Characterization of Defect Properties. IEEE Transactions on Nuclear Science, 65(2), 724-731. Lien externe

Jay, A., Raine, M., Richard, N., Mousseau, N., Goiffon, V., Hémeryck, A., & Magnan, P. (2017). Simulation of Single Particle Displacement Damage in Silicon-Part II: Generation and Long-Time Relaxation of Damage Structure. IEEE Transactions on Nuclear Science, 64(1), 141-148. Lien externe

Liste produite: Thu Oct 15 10:17:35 2026 EDT.