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Mid-infrared Imaging Using Strain-Relaxed Ge1-x Sn x Alloys Grown on 20 nm Ge Nanowires

Luo Luo, Mahmoud R. M. Atalla, Simone Assali, Sebastian Koelling, Gerard Daligou and Oussama Moutanabbir

Article (2024)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/58124/
Journal Title: Nano Letters (vol. 24, no. 16)
Publisher: ACS Publications
DOI: 10.1021/acs.nanolett.4c00759
Official URL: https://doi.org/10.1021/acs.nanolett.4c00759
Date Deposited: 30 Apr 2024 12:41
Last Modified: 30 Apr 2024 12:41
Cite in APA 7: Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., Daligou, G., & Moutanabbir, O. (2024). Mid-infrared Imaging Using Strain-Relaxed Ge1-x Sn x Alloys Grown on 20 nm Ge Nanowires. Nano Letters, 24(16), 4979 -4986-4979 -4986. https://doi.org/10.1021/acs.nanolett.4c00759

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