<  Back to the Polytechnique Montréal portal

Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon

A. W. Lussier, D. Bourbonnais-Sureault, M. Chicoine, R. Martel, Ludvik Martinu, S. Roorda and François Schiettekatte

Article (2024)

Open Acess document at official publisher
An external link is available for this item
Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/57455/
Journal Title: Journal of Applied Physics (vol. 135, no. 6)
Publisher: AIP Publishing
DOI: 10.1063/5.0186959
Official URL: https://doi.org/10.1063/5.0186959
Date Deposited: 28 Feb 2024 14:05
Last Modified: 12 Apr 2024 16:45
Cite in APA 7: Lussier, A. W., Bourbonnais-Sureault, D., Chicoine, M., Martel, R., Martinu, L., Roorda, S., & Schiettekatte, F. (2024). Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon. Journal of Applied Physics, 135(6), 065301 (12 pages). https://doi.org/10.1063/5.0186959

Statistics

Dimensions

Repository Staff Only

View Item View Item