A. W. Lussier, D. Bourbonnais-Sureault, M. Chicoine, R. Martel, Ludvik Martinu, S. Roorda and François Schiettekatte
Article (2024)
Open Acess document at official publisher |
Department: | Department of Engineering Physics |
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PolyPublie URL: | https://publications.polymtl.ca/57455/ |
Journal Title: | Journal of Applied Physics (vol. 135, no. 6) |
Publisher: | AIP Publishing |
DOI: | 10.1063/5.0186959 |
Official URL: | https://doi.org/10.1063/5.0186959 |
Date Deposited: | 28 Feb 2024 14:05 |
Last Modified: | 25 Sep 2024 16:49 |
Cite in APA 7: | Lussier, A. W., Bourbonnais-Sureault, D., Chicoine, M., Martel, R., Martinu, L., Roorda, S., & Schiettekatte, F. (2024). Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon. Journal of Applied Physics, 135(6), 065301 (12 pages). https://doi.org/10.1063/5.0186959 |
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