Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon

A. W. Lussier, David Bourbonnais-Sureault, M. Chicoine, Richard Martel, Ludvik Martinu, S. Roorda and François Schiettekatte

Article (2024)

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Department:	Department of Engineering Physics
PolyPublie URL:	https://publications.polymtl.ca/57455/
Journal Title:	Journal of Applied Physics (vol. 135, no. 6)
Publisher:	AIP Publishing
DOI:	10.1063/5.0186959
Official URL:	https://doi.org/10.1063/5.0186959
Date Deposited:	28 Feb 2024 14:05
Last Modified:	08 Apr 2025 07:26

Cite in APA 7:	Lussier, A. W., Bourbonnais-Sureault, D., Chicoine, M., Martel, R., Martinu, L., Roorda, S., & Schiettekatte, F. (2024). Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon. Journal of Applied Physics, 135(6), 065301 (12 pages). https://doi.org/10.1063/5.0186959
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