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A Small Footprint Digital Isolator based on CMOS Integrated Hall-effect Sensor

Seyed Sepehr Mirfakhraei, Yves Audet, Ahmad Hassan and Mohamad Sawan

Article (2022)

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Abstract

—Digital isolators have been widely used to protect low voltage electronics as well as human safety from high voltage surges. However, conventional isolation links occupy large chip areas. In this article, a novel small-size on-chip digital isolator for medium-bitrate application based on a CMOS integrated Hall-effect sensor is reported. With the proposed approach, the area of the transmitter coil is reduced to lower than 50% of conventional transformers. The architecture reduces the chip area in isolation amplifiers, power control units, DC-DC converters, and clock recovery circuits. It allows the integration of multichannel isolators using two custom integrated circuits with no post-processing. The tested prototype achieves a data transfer rate of 20 Mbps with above 12 kV/μs of common-mode transient immunity (CMTI). It has 900 V of continuous isolation working voltage, 27 ns propagation delay, and consumes 2.3 mA of static current.

Uncontrolled Keywords

Digital isolator; galvanic isolation; CMOS hall sensor; gate driver; integrated spiral coil

Additional Information: Publié en ligne le 2021-11-16.
Subjects: 2500 Electrical and electronic engineering > 2500 Electrical and electronic engineering
Department: Department of Electrical Engineering
Research Center: Polystim - Neurotechnology Laboratory
Funders: CRSNG/NSERC, MITACS, Canadian Microelectronics Corporation (CMC) Microsystems
PolyPublie URL: https://publications.polymtl.ca/49881/
Journal Title: IEEE Sensors Journal (vol. 22, no. 1)
Publisher: IEEE
DOI: 10.1109/jsen.2021.3128573
Official URL: https://doi.org/10.1109/jsen.2021.3128573
Date Deposited: 18 Apr 2023 14:59
Last Modified: 27 Sep 2024 17:48
Cite in APA 7: Mirfakhraei, S. S., Audet, Y., Hassan, A., & Sawan, M. (2022). A Small Footprint Digital Isolator based on CMOS Integrated Hall-effect Sensor. IEEE Sensors Journal, 22(1), 412-418. https://doi.org/10.1109/jsen.2021.3128573

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