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The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

Z. H. Zhang, Lihui Bai, C. M. Hu, S. Hemour, Ke Wu, X. L. Fan, D. S. Xue and D. Houssameddine

Article (2015)

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Cite this document: Zhang, Z. H., Bai, L., Hu, C. M., Hemour, S., Wu, K., Fan, X. L., ... Houssameddine, D. (2015). The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature. AIP Advances, 5(3). doi:10.1063/1.4916584
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Abstract

The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ) was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.

Open Access document in PolyPublie
Subjects: 2500 Génie électrique et électronique > 2500 Génie électrique et électronique
2500 Génie électrique et électronique > 2502 Électromagnétique, compatibilité et interférence
Department: Département de génie électrique
Research Center: Non applicable
Funders: CRSNG / NSERC, Fondation cannadienne pour l'innovation (CFI), University Research Grants Program (URGP)
Date Deposited: 17 Feb 2020 11:48
Last Modified: 18 Feb 2020 01:20
PolyPublie URL: https://publications.polymtl.ca/3623/
Document issued by the official publisher
Journal Title: AIP Advances (vol. 5, no. 3)
Publisher: American Institute of Physics
Official URL: https://doi.org/10.1063/1.4916584

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