John Dupuis, Rached Hajji, Fadhel M. Ghannouchi, Khaled Saab and Sylvain Lavallée
Article (1995)
An external link is available for this item| Additional Information: | Nom historique du département: Département de génie électrique et de génie informatique |
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| Department: |
Department of Electrical Engineering Department of Computer Engineering and Software Engineering |
| PolyPublie URL: | https://publications.polymtl.ca/32349/ |
| Journal Title: | IEEE Transactions on Electron Devices (vol. 42, no. 12) |
| Publisher: | IEEE |
| DOI: | 10.1109/16.477758 |
| Official URL: | https://doi.org/10.1109/16.477758 |
| Date Deposited: | 18 Apr 2023 15:24 |
| Last Modified: | 08 Apr 2025 06:53 |
| Cite in APA 7: | Dupuis, J., Hajji, R., Ghannouchi, F. M., Saab, K., & Lavallée, S. (1995). A new DC model of HBT's including self-heating effect suitable for circuit simulators. IEEE Transactions on Electron Devices, 42(12), 2036-2042. https://doi.org/10.1109/16.477758 |
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