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A new DC model of HBT's including self-heating effect suitable for circuit simulators

John Dupuis, Rached Hajji, Fadhel M. Ghannouchi, Khaled Saab and Sylvain Lavallée

Article (1995)

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Additional Information: Nom historique du département: Département de génie électrique et de génie informatique
Department: Department of Electrical Engineering
Department of Computer Engineering and Software Engineering
PolyPublie URL: https://publications.polymtl.ca/32349/
Journal Title: IEEE Transactions on Electron Devices (vol. 42, no. 12)
Publisher: IEEE
DOI: 10.1109/16.477758
Official URL: https://doi.org/10.1109/16.477758
Date Deposited: 18 Apr 2023 15:24
Last Modified: 05 Apr 2024 11:22
Cite in APA 7: Dupuis, J., Hajji, R., Ghannouchi, F. M., Saab, K., & Lavallée, S. (1995). A new DC model of HBT's including self-heating effect suitable for circuit simulators. IEEE Transactions on Electron Devices, 42(12), 2036-2042. https://doi.org/10.1109/16.477758

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