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Dupuis, J., Hajji, R., Ghannouchi, F. M., Saab, K., & Lavallée, S. (1995). A new DC model of HBT's including self-heating effect suitable for circuit simulators. IEEE Transactions on Electron Devices, 42(12), 2036-2042. Lien externe
Hajji, R., Beauregard, F., & Ghannouchi, F. M. (1997). Multitone power and intermodulation load-pull characterization of microwave transistors suitable for linear SSPA's design. IEEE Transactions on Microwave Theory and Techniques, 45(7), 1093-1099. Lien externe
Hajji, R., Kouki, A. B., El-Rabaie, S., & Ghannouchi, F. M. (1996). Systematic DC/small-signal/large-signal analysis of heterojunction bipolar transistors using a new consistent nonlinear model. IEEE Transactions on Microwave Theory and Techniques, 44(2), 233-241. Lien externe
Hajji, R. (1995). Modélisation grand-signal des transistors bipolaires à hétérojonction aux ondes centimétriques et millimétriques [Thèse de doctorat, École Polytechnique de Montréal]. Non disponible
Hajji, R., Kouki, A. B., & Ghannouchi, F. M. (1995). New nonlinear DC model for HBT and MESFET power devices. Microwave and Optical Technology Letters, 9(3), 130-133. Lien externe
Hajji, R., Ghannouchi, F. M., & Kouki, A. B. (1995). A systematic layout-based method for the modeling of high-power HBT's using the scaling approach. IEEE Transactions on Electron Devices, 42(3), 528-533. Lien externe
