Michel Bégin, Fadhel M. Ghannouchi, François Beauregard, Luca Selmi and Bruno Ricco
Article (1996)
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| Additional Information: | Nom historique du département: Département de génie électrique et de génie informatique |
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| Department: |
Department of Electrical Engineering Department of Computer Engineering and Software Engineering |
| PolyPublie URL: | https://publications.polymtl.ca/31525/ |
| Journal Title: | IEEE Transactions on Instrumentation and Measurement (vol. 45, no. 1) |
| Publisher: | Institute of Electrical and Electronics Engineers |
| DOI: | 10.1109/19.481339 |
| Official URL: | https://doi.org/10.1109/19.481339 |
| Date Deposited: | 18 Apr 2023 15:24 |
| Last Modified: | 08 Apr 2025 06:52 |
| Cite in APA 7: | Bégin, M., Ghannouchi, F. M., Beauregard, F., Selmi, L., & Ricco, B. (1996). Characterization of the transient behavior of a GaAs MESFET using dynamic I-V and S-parameter measurements. IEEE Transactions on Instrumentation and Measurement, 45(1), 231-237. https://doi.org/10.1109/19.481339 |
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